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NVMD6N04R2G
Dual MOSFET, N Channel, 40 V, 40 V, 5.8 A, 5.8 A, 0.027 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMD6N04R2G
Order Code3368888
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel5.8A
Continuous Drain Current Id P Channel5.8A
Drain Source On State Resistance N Channel0.027ohm
Drain Source On State Resistance P Channel0.027ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (19-Jan-2021)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
5.8A
Drain Source On State Resistance P Channel
0.027ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
5.8A
Drain Source On State Resistance N Channel
0.027ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability