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NVD5C648NLT4G
Power MOSFET, N Channel, 60 V, 89 A, 0.0034 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | £1.240 |
| 500+ | £1.170 |
| 1000+ | £1.100 |
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Multiple: 5
£127.50 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVD5C648NLT4G
Order Code3368858RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id89A
Drain Source On State Resistance0.0034ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation72W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
89A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
72W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0034ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability