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NVATS4A103PZT4G
Power MOSFET, P Channel, 30 V, 60 A, 0.013 ohm, ATPAK, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVATS4A103PZT4G
Order Code3616589
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id60A
Drain Source On State Resistance0.013ohm
Transistor Case StyleATPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
60A
Transistor Case Style
ATPAK
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.013ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1