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NVATS4A101PZT4G
Power MOSFET, P Channel, 30 V, 27 A, 0.03 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Non-Cancellable / Non-Returnable
Product Information
ManufacturerONSEMI
Manufacturer Part NoNVATS4A101PZT4G
Order Code3616586
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id27A
Drain Source On State Resistance0.03ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation36W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (19-Jan-2021)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
27A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
36W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.03ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1