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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTR1P02T1G
Order Code2317617
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id1A
Drain Source On State Resistance0.148ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation400mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NTR1P02T1G is a P-channel Power MOSFET features ultra-low on-resistance provides higher efficiency and extends battery life.
Applications
Communications & Networking, Computers & Computer Peripherals
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
1A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
400mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.148ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for NTR1P02T1G
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033
Product traceability