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NTMFS4H01NT1G
Power MOSFET, N Channel, 25 V, 334 A, 550 µohm, DFN, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS4H01NT1G
Order Code2728033
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id334A
Drain Source On State Resistance550µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation125W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (19-Jan-2021)
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Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
334A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
550µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000161
Product traceability