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NTE4151PT1G
Power MOSFET, P Channel, 20 V, 760 mA, 0.36 ohm, SC-89, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £0.346 |
| 50+ | £0.190 |
| 100+ | £0.104 |
| 500+ | £0.102 |
| 1500+ | £0.0997 |
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Multiple: 5
£1.73 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTE4151PT1G
Order Code2845376
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id760mA
Drain Source On State Resistance0.36ohm
Transistor Case StyleSC-89
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Power Dissipation313mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
760mA
Transistor Case Style
SC-89
Rds(on) Test Voltage
4.5V
Power Dissipation
313mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.36ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001
Product traceability