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NTD4969NT4G
Power MOSFET, N Channel, 30 V, 41 A, 6900 µohm, TO-252 (DPAK), Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTD4969NT4G
Order Code2724409RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id41A
Drain Source On State Resistance6900µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation26.3W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for NTD4969NT4G
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
41A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
26.3W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
6900µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Vietnam
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000396
Product traceability