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NTD4963N-35G
Power MOSFET, N Channel, 30 V, 44 A, 0.0082 ohm, TO-251, Through Hole
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTD4963N-35G
Order Code2317603
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id44A
Drain Source On State Resistance0.0082ohm
Transistor Case StyleTO-251
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.45V
Power Dissipation35.7W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The NTD4963N-35G is a N-channel Power MOSFET designed for CPU power delivery, DC-to-DC converters and recommended for high side (control) applications.
- Low RDS (ON) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Halogen-free
- -55 to 175°C Operating junction temperature range
Applications
Computers & Computer Peripherals, Automation & Process Control, Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
44A
Transistor Case Style
TO-251
Rds(on) Test Voltage
10V
Power Dissipation
35.7W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0082ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.45V
No. of Pins
4Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033