NSS60200LT1G
Bipolar (BJT) Single Transistor, PNP, 60 V, 2 A, 540 mW, SOT-23, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £0.352 |
| 10+ | £0.202 |
| 100+ | £0.123 |
| 500+ | £0.117 |
| 1000+ | £0.110 |
| 5000+ | £0.0828 |
Product Information
Product Overview
The NSS60200LT1G is a 4A PNP Bipolar Transistor designed for use in low voltage and high speed switching applications where affordable efficient energy control is important. It is a miniature surface-mount device featuring ultra-low saturation voltage VCE(sat) and high current gain capability. In the automotive industry it can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the linear gain (Beta) makes it ideal components in analogue amplifiers.
- ESD robust
- High current gain
- High cut-off frequency
- Low profile package
- Improved circuit efficiency
- Decreased battery charge time
- Reduce component count
- High frequency switching
- Smaller portable product
- No distortion
- AECQ101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive, Signal Processing, Portable Devices, Wireless, Consumer Electronics, Computers & Computer Peripherals, Motor Drive & Control, Communications & Networking
Technical Specifications
PNP
2A
SOT-23
3Pins
100hFE
-
MSL 1 - Unlimited
60V
540mW
Surface Mount
100MHz
150°C
AEC-Q101
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate