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NSBC113EF3T5G
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNSBC113EF3T5G
Order Code3617206
Technical Datasheet
Transistor PolaritySingle NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R1-
Base Emitter Resistor R2-
Transistor Case StyleSOT-1123
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation297mW
Operating Temperature Max150°C
DC Current Gain hFE Min3hFE
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
Single NPN
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
-
Transistor Case Style
SOT-1123
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
No. of Pins
3 Pin
Power Dissipation
297mW
DC Current Gain hFE Min
3hFE
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability