Print Page
NSBA143ZDXV6T1G
Bipolar Pre-Biased / Digital Transistor, Dual PNP, 50 V, 100 mA
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNSBA143ZDXV6T1G
Order Code3617195
Technical Datasheet
Transistor PolarityDual PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP50V
Continuous Collector Current100mA
Base Input Resistor R1-
Base Emitter Resistor R2-
Transistor Case StyleSOT-563
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation500mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
Dual PNP
Collector Emitter Voltage Max PNP
50V
Base Input Resistor R1
-
Transistor Case Style
SOT-563
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
-
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
No. of Pins
6 Pin
Power Dissipation
500mW
DC Current Gain hFE Min
80hFE
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability