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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNGTB30N120IHLWG
Order Code2321666
Technical Datasheet
Continuous Collector Current60A
Collector Emitter Saturation Voltage1.75V
Power Dissipation260W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The NGTB30N120IHLWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
- Low saturation voltage using Trench with field-stop technology
- Low switching loss - Reduces system power dissipation
- Optimized for low case temperature in IH cooker application
- Low gate charge
- Low conduction loss
Applications
HVAC, Consumer Electronics, Power Management
Technical Specifications
Continuous Collector Current
60A
Power Dissipation
260W
Transistor Case Style
TO-247
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
1.75V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00542