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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBTA63LT1G
Order Code2464052RL
Transistor PolarityPNP
Collector Emitter Voltage Max30V
Collector Emitter Voltage V(br)ceo30V
Continuous Collector Current500mA
Power Dissipation Pd225mW
DC Collector Current500mA
Power Dissipation225mW
No. of Pins3Pins
DC Current Gain hFE5000hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
DC Current Gain hFE Min5000hFE
Product Range-
QualificationAEC-Q101
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Product Overview
The MMBTA63LT1G is a PNP bipolar Darlington Transistor designed for use in switching applications such as print hammer, relay, solenoid and lamp drivers. The device is housed in the package which is designed for lower power surface-mount applications.
- Low RDS (ON) provides higher efficiency and extends battery life
- Saves board space
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
30V
Power Dissipation Pd
225mW
Power Dissipation
225mW
DC Current Gain hFE
5000hFE
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Voltage Max
30V
Continuous Collector Current
500mA
DC Collector Current
500mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
5000hFE
Qualification
AEC-Q101
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033