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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT6517LT1G
Order Code1653627
Product RangeMMBTxxxx
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max350V
Continuous Collector Current100mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency200MHz
DC Current Gain hFE Min15hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
Qualification-
Alternatives for MMBT6517LT1G
2 Products Found
Product Overview
The MMBT6517LT1G is a NPN high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface-mount applications.
- Low RDS (ON) provides higher efficiency and extends battery life
- Saves board space
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
100mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
15hFE
Product Range
MMBTxxxx
Collector Emitter Voltage Max
350V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
200MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001