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MMBT5551M3T5G
Bipolar (BJT) Single Transistor, NPN, 160 V, 60 mA, 265 mW, SOT-723, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £0.140 |
| 10+ | £0.0832 |
| 100+ | £0.0519 |
| 500+ | £0.0387 |
| 1000+ | £0.0297 |
| 5000+ | £0.0255 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT5551M3T5G
Order Code2727983
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Continuous Collector Current60mA
Power Dissipation265mW
Transistor Case StyleSOT-723
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
60mA
Transistor Case Style
SOT-723
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
160V
Power Dissipation
265mW
Transistor Mounting
Surface Mount
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00004
Product traceability