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| Quantity | Price (ex VAT) |
|---|---|
| 500+ | £0.0358 |
| 1500+ | £0.0264 |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
£21.40 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT5551LT1G
Order Code1459109RL
Product RangeMMBTxxxx
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Continuous Collector Current600mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min80hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
QualificationAEC-Q101
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified.
- Halogen-free
Applications
Automotive, Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
600mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
80hFE
Product Range
MMBTxxxx
MSL
-
Collector Emitter Voltage Max
160V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.09