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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT5401
Order Code2438278
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max150V
Continuous Collector Current600mA
Power Dissipation350mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min50hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for MMBT5401
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Product Overview
The MMBT5401 is a PNP epitaxial Silicon Transistor designed as a general-purpose amplifier and switch for applications requiring high voltage.
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
600mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
50hFE
Product Range
-
Collector Emitter Voltage Max
150V
Power Dissipation
350mW
Transistor Mounting
Surface Mount
Transition Frequency
300MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001