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MMBFJ309
JFET Transistor, JFET, -25 V, 30 mA, -4 V, SOT-23, 3 Pin, 150 °C
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBFJ309
Order Code2453381
Technical Datasheet
Gate Source Breakdown Voltage Max-25V
Zero Gate Voltage Drain Current Idss Min12mA
Zero Gate Voltage Drain Current Max30mA
Gate Source Cutoff Voltage Max-4V
Transistor Case StyleSOT-23
Transistor TypeRF FET
Operating Temperature Max150°C
No. of Pins3 Pin
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Qualification-
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7 Products Found
Product Overview
The MMBFJ309 is a N-channel RF JFET designed for VHF/UHF amplifier, oscillator and mixer applications.
- Interchangeable source and drain
- 25V Drain-source voltage
- -25V Gate-source voltage
- 10mA Forward gate current
Applications
Industrial, RF Communications, Power Management
Technical Specifications
Gate Source Breakdown Voltage Max
-25V
Zero Gate Voltage Drain Current Max
30mA
Transistor Case Style
SOT-23
Operating Temperature Max
150°C
Channel Type
N Channel
Product Range
-
MSL
MSL 1 - Unlimited
Zero Gate Voltage Drain Current Idss Min
12mA
Gate Source Cutoff Voltage Max
-4V
Transistor Type
RF FET
No. of Pins
3 Pin
Transistor Mounting
Surface Mount
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000056
Product traceability