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MJD31CT4G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK)
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £0.647 |
| 50+ | £0.386 |
| 100+ | £0.290 |
| 500+ | £0.222 |
| 1000+ | £0.189 |
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Multiple: 5
£3.24 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD31CT4G
Order Code2317563
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Continuous Collector Current3A
Power Dissipation15W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency3MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
The MJD31CT4G is a 3A NPN bipolar Power Transistor designed for general purpose amplifier and low speed switching applications.
- Electrically similar to popular TIP31 and TIP32 series
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
3A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
10hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Power Dissipation
15W
Transistor Mounting
Surface Mount
Transition Frequency
3MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033
Product traceability