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MJD3055TF
Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A, 1.75 W, TO-252 (DPAK), Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD3055TF
Order Code2453354RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current10A
Power Dissipation1.75W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min5hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for MJD3055TF
3 Products Found
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
10A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
5hFE
Product Range
-
Collector Emitter Voltage Max
60V
Power Dissipation
1.75W
Transistor Mounting
Surface Mount
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00026
Product traceability