Print Page
MJD3055G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 10 A, 1.75 W, TO-252 (DPAK)
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD3055G
Order Code1653617
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current10A
Power Dissipation1.75W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min10hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for MJD3055G
3 Products Found
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
10A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
DC Current Gain hFE Min
10hFE
Product Range
-
Collector Emitter Voltage Max
60V
Power Dissipation
1.75W
Transistor Mounting
Surface Mount
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.04