Print Page
MJ14002G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1 mA, 300 W, TO-204AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJ14002G
Order Code1611192
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current1mA
Power Dissipation300W
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency-
DC Current Gain hFE Min100hFE
Operating Temperature Max200°C
Product Range-
Qualification-
Product Overview
The MJ14002G is a 60A NPN bipolar Power Transistor designed for use in high power amplifier and switching circuit applications.
- Complementary device
- Low collector-emitter saturation voltage VCE(sat) = 2.5VDC maximum @ IC = 50A DC
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1mA
Transistor Case Style
TO-204AA
No. of Pins
2Pins
DC Current Gain hFE Min
100hFE
Product Range
-
Collector Emitter Voltage Max
80V
Power Dissipation
300W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
200°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001