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MCH6663-TL-W
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 1.8 A, 1.8 A, 0.145 ohm
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMCH6663-TL-W
Order Code3368887
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel1.8A
Continuous Drain Current Id P Channel1.8A
Drain Source On State Resistance N Channel0.145ohm
Drain Source On State Resistance P Channel0.145ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel800mW
Power Dissipation P Channel800mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
1.8A
Drain Source On State Resistance P Channel
0.145ohm
No. of Pins
6Pins
Power Dissipation P Channel
800mW
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
1.8A
Drain Source On State Resistance N Channel
0.145ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
800mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability