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KST5551MTF.
Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 350 mW, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoKST5551MTF.
Order Code2825117RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max160V
Continuous Collector Current600mA
Power Dissipation350mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for KST5551MTF.
3 Products Found
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
600mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
Collector Emitter Voltage Max
160V
Power Dissipation
350mW
Transistor Mounting
Surface Mount
Transition Frequency
300MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability