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KSC5019MTA..
Bipolar (BJT) Single Transistor, NPN, 10 V, 2 A, 750 mW, TO-226AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoKSC5019MTA..
Order Code2453957
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max10V
Continuous Collector Current2A
Power Dissipation750mW
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency150MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The KSC5019MTA is a NPN Epitaxial Silicon Transistor offers 30V collector base voltage and 2A collector current.
- Low saturation
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
2A
Transistor Case Style
TO-226AA
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
-
Collector Emitter Voltage Max
10V
Power Dissipation
750mW
Transistor Mounting
Through Hole
Transition Frequency
150MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00024
Product traceability