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KSA733GTA
Bipolar (BJT) Single Transistor, PNP, 50 V, 150 mA, 250 mW, TO-226AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoKSA733GTA
Order Code2453938
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max50V
Continuous Collector Current150mA
Power Dissipation250mW
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency180MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
Product Overview
The KSA733GTA is a PNP Epitaxial Silicon Transistor offers -60V collector base voltage and -150mA collector current. It is suitable for low frequency amplifier applications.
- Complement to KSC945
Applications
RF Communications, Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
150mA
Transistor Case Style
TO-226AA
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
50V
Power Dissipation
250mW
Transistor Mounting
Through Hole
Transition Frequency
180MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00059
Product traceability