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KSA1015YTA
Bipolar (BJT) Single Transistor, PNP, 50 V, 150 mA, 400 mW, TO-226AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoKSA1015YTA
Order Code2453934
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max50V
Continuous Collector Current150mA
Power Dissipation400mW
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency80MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
Product Overview
The KSA1015YTA is a PNP Epitaxial Silicon Transistor offers -50V low base voltage VCBO and -150mA collector current.
- Low frequency amplifier
- Complementary to KSC1815
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
150mA
Transistor Case Style
TO-226AA
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
50V
Power Dissipation
400mW
Transistor Mounting
Through Hole
Transition Frequency
80MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00024