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IRFU220BTU-AM002
Power MOSFET, N Channel, 200 V, 4.6 A, 0.8 ohm, TO-251 (IPAK), Through Hole
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoIRFU220BTU-AM002
Order Code3616310
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id4.6A
Drain Source On State Resistance0.8ohm
Transistor Case StyleTO-251 (IPAK)
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.6A
Transistor Case Style
TO-251 (IPAK)
Rds(on) Test Voltage
10V
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability