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FW389-TL-2W
Dual MOSFET, Complementary N and P Channel, 100 V, 100 V, 2 A, 2 A, 0.165 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFW389-TL-2W
Order Code2845401RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id N Channel2A
Continuous Drain Current Id P Channel2A
Drain Source On State Resistance N Channel0.165ohm
Drain Source On State Resistance P Channel0.165ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.2W
Power Dissipation P Channel2.2W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id P Channel
2A
Drain Source On State Resistance P Channel
0.165ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.2W
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id N Channel
2A
Drain Source On State Resistance N Channel
0.165ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.2W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability