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FQD2N80
Power MOSFET, N Channel, 800 V, 1.8 A, 6.3 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD2N80
Order Code9845119
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id1.8A
Drain Source On State Resistance6.3ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max5V
Power Dissipation2.5W
No. of Pins-
Operating Temperature Max-
Product Range-
Qualification-
MSL-
Alternatives for FQD2N80
2 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.8A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
-
Power Dissipation
2.5W
Operating Temperature Max
-
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
6.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
-
Product Range
-
MSL
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004