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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD2N100TM
Order Code1505060
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id1.6A
Drain Source On State Resistance9ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for FQD2N100TM
1 Product Found
Product Overview
The FQD2N100TM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (12nC)
- Low Crss (5pF)
- 100% avalanche tested
Applications
Industrial, Power Management, Lighting
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.6A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
9ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000562