Print Page
FQD13N10LTM
Power MOSFET, N Channel, 100 V, 10 A, 0.142 ohm, TO-252AA, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
8,727 In Stock
Need more?
Next Day Delivery
Order before 6pm standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £0.769 |
| 50+ | £0.542 |
| 100+ | £0.362 |
| 500+ | £0.287 |
| 1000+ | £0.256 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
£3.84 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD13N10LTM
Order Code2454167
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id10A
Drain Source On State Resistance0.142ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FQD13N10LTM is a QFET® enhancement-mode N-channel Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- Low level gate drive requirements allowing direct operation form logic drivers
- 100% avalanche tested
- 8.7nC typical low gate charge
- 20pF typical low Crss
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.142ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for FQD13N10LTM
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00026
Product traceability