Print Page
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB8N60CTM
Order Code3616214
Product RangeQFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id7.5A
Drain Source On State Resistance1ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation147W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Alternatives for FQB8N60CTM
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
147W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
1ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
QFET
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1