Print Page
FQB34N20TM-AM002
Power MOSFET, N Channel, 200 V, 31 A, 0.075 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB34N20TM-AM002
Order Code3616210
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id31A
Drain Source On State Resistance0.075ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation180W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for FQB34N20TM-AM002
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
31A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
180W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.075ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability