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FJV3105RMTF.
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFJV3105RMTF.
Order Code3003736RL
Technical Datasheet
Transistor PolaritySingle NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R14.7kohm
Base Emitter Resistor R210kohm
Transistor Case StyleSOT-23
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation200mW
Operating Temperature Max150°C
DC Current Gain hFE Min30hFE
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
Single NPN
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
4.7kohm
Transistor Case Style
SOT-23
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current
100mA
Base Emitter Resistor R2
10kohm
No. of Pins
3 Pin
Power Dissipation
200mW
DC Current Gain hFE Min
30hFE
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Switzerland
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Switzerland
Country in which last significant manufacturing process was carried out
Tariff No:85413000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005
Product traceability