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FJP13007TU
Bipolar (BJT) Single Transistor, NPN, 400 V, 8 A, 80 W, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFJP13007TU
Order Code1505016
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Continuous Collector Current8A
Power Dissipation80W
Transistor Case StyleTO-220
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency4MHz
DC Current Gain hFE Min8hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FJP13007TU is an NPN Silicon Transistor features high voltage fast switching and suitable for electronic ballast and switching regulator.
- High voltage capability
- High speed switching
Applications
Lighting, Power Management
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
8A
Transistor Case Style
TO-220
No. of Pins
3Pins
DC Current Gain hFE Min
8hFE
Product Range
-
Collector Emitter Voltage Max
400V
Power Dissipation
80W
Transistor Mounting
Through Hole
Transition Frequency
4MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002041