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250+ | £0.584 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFJB102TM
Order Code2453344RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Collector Emitter Voltage Max100V
Continuous Collector Current8A
Power Dissipation Pd80W
DC Collector Current8A
Power Dissipation80W
RF Transistor CaseTO-263AB
No. of Pins3Pins
DC Current Gain hFE200hFE
Transistor MountingSurface Mount
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FJB102TM is a NPN high voltage power Darlington Transistor offers low collector-emitter saturation voltage.
- High DC current gain (1000 hFE @ 4V VCE, 3A minimum IC)
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
100V
Power Dissipation Pd
80W
Power Dissipation
80W
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
8A
DC Collector Current
8A
RF Transistor Case
TO-263AB
DC Current Gain hFE
200hFE
DC Current Gain hFE Min
200hFE
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001312
Product traceability