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FFSH20120A
Silicon Carbide Schottky Diode, EliteSiC, Single, 1.2 kV, 30 A, 120 nC, TO-247
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFFSH20120A
Order Code3607852
Technical Datasheet
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current30A
Total Capacitive Charge120nC
Diode Case StyleTO-247
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
Qualification-
SVHCNo SVHC (15-Jan-2018)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
1.2kV
Total Capacitive Charge
120nC
No. of Pins
2 Pin
Diode Mounting
Through Hole
SVHC
No SVHC (15-Jan-2018)
Diode Configuration
Single
Average Forward Current
30A
Diode Case Style
TO-247
Operating Temperature Max
175°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability