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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV305N
Order Code1471059
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id900mA
Drain Source On State Resistance0.22ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDV305N is a N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for load switch and battery protection applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
900mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.22ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000363
Product traceability