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FDS86106
Power MOSFET, N Channel, 100 V, 3.4 A, 0.083 ohm, SOIC, Surface Mount
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS86106
Order Code2083335
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id3.4A
Drain Source On State Resistance0.083ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.9V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.4A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.083ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.9V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005