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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMS86300DC
Order Code2322593
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id76A
Drain Source On State Resistance0.0026ohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.3V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FDMS86300DC is a N-channel MOSFET produced using advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest RDS (ON) while maintaining excellent switching performance by extremely low junction-to-ambient thermal resistance. It is suitable as synchronous rectifier for DC-to-DC converters.
- Dual Cool™ top side cooling package
- High performance technology for extremely low RDS (ON)
- 100% UIL tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
76A
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.3V
No. of Pins
8Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000816
Product traceability