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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMS6673BZ
Order Code2083282RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id28A
Drain Source On State Resistance5200µohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation73W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor‘s PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
- MSL1 robust package design
- 8kV Typical HBM ESD protection level
Applications
Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
28A
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Power Dissipation
73W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
5200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000135