Print Page
FDME910PZT
Power MOSFET, P Channel, 20 V, 8 A, 0.02 ohm, MicroFET, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDME910PZT
Order Code3368747
Product RangePowerTrench
Technical Datasheet
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDME910PZT
Order Code3368747
Product RangePowerTrench
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id8A
Drain Source On State Resistance0.02ohm
Transistor Case StyleMicroFET
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation2.1W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangePowerTrench
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
8A
Transistor Case Style
MicroFET
Rds(on) Test Voltage
4.5V
Power Dissipation
2.1W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
6Pins
Product Range
PowerTrench
SVHC
No SVHC (15-Jan-2018)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability