Print Page
FDME1024NZT
Dual MOSFET, N Channel, 20 V, 20 V, 3.8 A, 3.8 A, 0.055 ohm
Image is for illustrative purposes only. Please refer to product description.
1,460 In Stock
Need more?
EXPRESS Delivery Next Business Day - arrives by 1PM*
Order before 6pm
FREE Standard Delivery
on orders £0.00 and over
Accurate delivery times will be calculated in Checkout
| Quantity | Price (ex VAT) |
|---|---|
| 100+ | £0.352 |
| 500+ | £0.278 |
| 1000+ | £0.233 |
| 5000+ | £0.204 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
£38.70 (ex VAT)
A £3.50 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDME1024NZT
Order Code2083357RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel3.8A
Continuous Drain Current Id P Channel3.8A
Drain Source On State Resistance N Channel0.055ohm
Drain Source On State Resistance P Channel0.055ohm
Transistor Case StyleµFET
No. of Pins6Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDME1024NZT is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
- Low profile
- Halogen-free
- ±8V Gate to source voltage
- 3.8A Continuous drain current
- 6A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
3.8A
Drain Source On State Resistance P Channel
0.055ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
3.8A
Drain Source On State Resistance N Channel
0.055ohm
Transistor Case Style
µFET
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000054
Product traceability