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FDMD86100
Dual MOSFET, N Channel, 100 V, 39 A, 10.5 mohm
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Non-Cancellable / Non-Returnable
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMD86100
Order Code3616878
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel39A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel10.5mohm
Drain Source On State Resistance P Channel-
Transistor Case StylePQFN
No. of Pins8Pins
Power Dissipation N Channel33W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id N Channel
39A
Drain Source On State Resistance N Channel
10.5mohm
Transistor Case Style
PQFN
Power Dissipation N Channel
33W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability