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FDMB3800N
Dual MOSFET, N Channel, 30 V, 4.8 A, 0.032 ohm
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No Longer Stocked
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMB3800N
Order Code1885759
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel4.8A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.032ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleµFET
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
4.8A
Drain Source On State Resistance N Channel
0.032ohm
Transistor Case Style
µFET
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005