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FDG6304P.
Dual MOSFET, P Channel, 25 V, 410 mA
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6304P.
Order Code1653657
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel410mA
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel1.1ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for FDG6304P.
1 Product Found
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
410mA
Drain Source On State Resistance P Channel
1.1ohm
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Product Range
-
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SC-70
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.04