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FDD9409-F085
Power MOSFET, N Channel, 40 V, 90 A, 0.0023 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFDD9409-F085
Order Code3003936RL
Product RangePowerTrench
Technical Datasheet
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | £0.817 |
| 500+ | £0.696 |
| 1000+ | £0.655 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD9409-F085
Order Code3003936RL
Product RangePowerTrench
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id90A
Drain Source On State Resistance0.0023ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.2V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangePowerTrench
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Product Overview
FDD9409-F085 is a N-channel PowerTrench® MOSFET. Application includes automotive engine control, powertrain management, solenoid and motor drivers, electronic steering, integrated starter/alternator, distributed Power Architectures and VRM, primary switch for 12V systems.
- Drain-to-source on resistance is 2.3mohm(typ, TJ = 25°C, ID = 80A, VGS= 10V)
- 42nC typical total gate charge at 10V (VGS = 0 to 10V, VDD = 20V, ID = 80A)
- 40V minimum drain-to-source breakdown voltage (ID = 250μA, VGS = 0V)
- 1μA maximum drain-to-source leakage current (TJ = 25°C, VDS = 40V, VGS = 0V)
- Gate-to-source leakage current is ±100nA (maximum, VGS = ±20V)
- Input capacitance is 3130pF (typical, VDS = 25V, VGS = 0V, f = 1MHz)
- Output capacitance is 756pF (typical, VDS = 25V, VGS = 0V, f = 1MHz)
- Gate resistance is 2ohm (f = 1MHz, TJ = 25°C)
- Source-to-drain diode voltage is 1.25V (max, ISD = 80A, VGS = 0V)
- D-PAK(TO-252) package, operating and storage temperature range from -55 to + 175°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0023ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.2V
No. of Pins
3Pins
Product Range
PowerTrench
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85413000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005
Product traceability