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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD8445
Order Code1228331
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id15.2A
Drain Source On State Resistance0.0087ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FDD8445 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for electronic transmission, distributed power architecture and VRMs applications.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
15.2A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
79W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0087ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001814
Product traceability